 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| www..com DFF4N60 N-Channel MOSFET Features High ruggedness RDS(on) (Max 2.5 )@VGS=10V 1. Gate 3. Source Gate Charge (Typical 25nC) Improved dv/dt Capability 100% Avalanche Tested N-Channel MOSFET 2. Drain BVDSS = 600V RDS(ON) = 2.5 ohm ID = 4A General Description This N-channel enhancement mode field-effect power transistor using D& I semiconductor's advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche characteristics. The TO-220F( Isolated ) pkg is well suited for adaptor power unit and power inverter application. TO-220F 12 3 Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Drain to Source Voltage Continuous Drain Current(@TC = 25C)* Continuous Drain Current(@TC = 100C)* Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@TC = 25 C) Derating Factor above 25 C Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. (Note 2) (Note 1) (Note 3) (Note 1) Parameter Value 600 4 2.5 16 Units V A A A V mJ mJ V/ns W W/C C C 30 262 3.3 4.5 33 0.26 - 55 ~ 150 300 * Ensure that the channel temperature does not exceed 150 Thermal Characteristics Symbol RJC RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Value Min. - Typ. - Max. 3.79 62.5 Units C/W C/W Mar, 2005. Rev. 1. Copyright@ D&I Semiconductor Co., Ltd., Korea. All rights reserved. 1/7 www..com DFF4N60 Electrical Characteristics Symbol Off Characteristics BVDSS BVDSS/ TJ IDSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature coefficient Drain-Source Leakage Current Gate-Source Leakage, Forward Gate-source Leakage, Reverse VGS = 0V, ID = 250uA ID = 250uA, referenced to 25 C VDS = 600V, VGS = 0V VDS = 480V, TC = 125 C VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VDS = VGS, ID = 250uA VGS =10 V, ID = 2.0A 600 0.68 10 100 100 -100 V V/C uA uA nA nA ( TC = 25 C unless otherwise noted ) Parameter Test Conditions Min Typ Max Units IGSS On Characteristics VGS(th) RDS(ON) Gate Threshold Voltage Static Drain-Source On-state Resistance 2.0 2.0 4.0 2.5 V Dynamic Characteristics Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS =0 V, VDS =25V, f = 1MHz 520 135 280 650 195 400 pF Dynamic Characteristics Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge(Miller Charge) VDS =480V, VGS =10V, ID =4.0A see fig. 12. (Note 4, 5) VDD =300V, ID =4.0A, RG =25 see fig. 13. (Note 4, 5) 25 54 120 34 22 3.2 7.8 32 70 157 45 28 nC ns - Source-Drain Diode Ratings and Characteristics Symbol IS ISM VSD trr Qrr Parameter Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Test Conditions Integral Reverse p-n Junction Diode in the MOSFET IS =4.0A, VGS =0V IS=4.0A, VGS=0V, dIF/dt=100A/us Min. - Typ. 560 1.78 Max. 4.0 16.0 1.4 - Unit. A V ns uC NOTES 1. Repeativity rating : pulse width limited by junction temperature 2. L = 30mH, IAS =4.0A, VDD = 50V, RG = 50 , Starting TJ = 25C 4.0, di/dt 300A/us, VDD BVDSS, Starting TJ = 25C 3. ISD 4. Pulse Test : Pulse Width 300us, Duty Cycle 2% 5. Essentially independent of operating temperature. 2/7 www..com DFF4N60 Fig 1. On-State Characteristics 10 1 Fig 2. Transfer Characteristics 10 1 ID, Drain Current [A] 10 0 ID, Drain Current [A] VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Top : 10 0 150 C 25 C -55 C Notes : 1. VDS = 50V 2. 250 s Pulse Test o o o 10 -1 Notes : 1. 250 s Pulse Test 2. TC = 25 10 -2 10 -1 10 0 10 1 10 -1 2 3 4 5 6 7 8 9 10 VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] Fig 3. On Resistance Variation vs. Drain Current and Gate Voltage 6 Fig 4. On State Current vs. Allowable Case Temperature RDS(ON), Drain-Source On-Resistance [ ] 4 VGS = 10V 3 IDR, Reverse Drain Current [A] 5 10 1 150 10 0 25 2 VGS = 20V 1 Note : TJ = 25 Notes : 1. VGS = 0V 2. 250 s Pulse Test 0 0 2 4 6 8 10 12 10 -1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 ID, Drain Current [A] VSD, Source-Drain voltage [V] Fig 5. Capacitance Characteristics ( Non-Repetitive ) 750 Fig 6. Gate Charge Characteristics 12 VGS, Gate-Source Voltage [V] Ciss=Cgs+Cgd(Cds=shorted) Coss=Cds+Cgd Crss=Cgd VDS = 120V 10 VDS = 300V VDS = 480V Capacitance [pF] 500 Ciss Notes : 1. VGS = 0V 2. f=1MHz 8 Coss 250 6 4 Crss 2 Note : ID = 4.0 A 0 0 5 10 15 20 25 30 35 0 0 4 8 12 16 20 24 28 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] 3/7 www..com DFF4N60 Fig 7. Breakdown Voltage Variation vs. Junction Temperature 1.2 3.0 Fig 8. On-Resistance Variation vs. Junction Temperature BVDSS, (Normalized) Drain-Source Breakdown Voltage RDS(on), (Normalized) Drain-Source On-Resistance 2.5 1.1 2.0 1.0 1.5 1.0 Notes : 1. VGS = 10 V 2. ID = 1.2 A 0.9 Notes : 1. VGS = 0 V 2. ID = 250 A 0.5 0.8 -100 -50 0 50 100 o 150 200 0.0 -100 -50 0 50 100 o 150 200 TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Fig 9. Maximum Safe Operating Area Fig 10. Maximum Drain Current vs. Case Temperature 5 10 2 Operation in This Area is Limited by R DS(on) 4 ID, Drain Current [A] 100 s 1 ms ID' Drain Current [A] 10 1 3 10 0 10 ms DC 2 10 -1 Notes : 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse 0 o o 1 10 -2 10 10 1 10 2 10 3 0 25 50 75 100 o 125 150 VDS, Drain-Source Voltage [V] TC' Case Temperature [ C] Fig 11. Transient Thermal Response Curve Z JC(t), Thermal Response D = 0 .5 10 0 0 .2 0 .1 0 .0 5 10 -1 N o te s : 1 . Z JC = 3 .7 9 (t) /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T JM - T C = P D M * Z JC (t) 0 .0 2 0 .0 1 s in g le p u ls e 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] 4/7 www..com DFF4N60 Fig. 12. Gate Charge Test Circuit & Waveforms 12V 200nF 50KO 300nF Same Type as DUT VGS Qg VDS VGS DUT 1mA Qgs Qgd Charge Fig 13. Switching Time Test Circuit & Waveforms VDS RL VDD (0.5 rated VDS) VDS 90% 10V RG Pulse Generator DUT Vin 10% td(on) tr ton td(off) toff tf Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms L VDS ID RG VDD 1 EAS = BVDSS IAS 2 LL IAS 2 BVDSS BVDSS - VDD ID(t) 10V DUT tp Time VDS(t) 5/7 www..com DFF4N60 Fig. 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ IS L Driver RG Same Type as DUT VDD VGS * dv/dt controlled by RG * IS controlled by pulse period VGS ( Driver ) Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current IS ( DUT ) IRM di/dt Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt Vf VDD Body Diode Forward Voltage Drop 6/7 www..com DFF4N60 G D H K A O E B F L C M I J N D i m e n s io n [ m m ] M in . A B C D E F G H 6 .7 3 7 .8 2 1 3 .0 5 2 .2 0 1 4 .4 7 2 .9 8 4 .3 5 2 .9 6 Typ. 6 .9 3 8 .0 2 1 3 .2 5 2 .5 0 1 4 .7 7 3 .1 8 4 .5 5 3 .0 6 M a x. 7 .1 3 8 .2 2 1 3 .4 5 2 .8 0 1 5 .0 7 3 .3 8 4 .7 5 3 .1 6 I J K L M N M in . 0 .5 5 2 .2 6 9 .0 0 1 .1 0 2 .4 7 4 .9 4 3 .0 0 D i m e n s io n [ m m ] Typ. 0 .5 9 2 .4 6 9 .5 0 1 .5 0 2 .5 7 5 .0 4 3 .0 5 M a x. 0 .6 5 2 .6 6 1 0 .0 1 .9 0 2 .6 7 5 .1 4 3 .1 0 7/7 |
Price & Availability of DFF4N60
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |